RU20E60L替換型號(hào)DB006NG-S，P TO P兼容RU20E60L

型號(hào)：DB006NG-S

電壓電流：20V60A

N管

封裝：TO-252

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.?

Features：

1) VDS=20V,ID=60A,RDS(ON)<6mΩ@VGS=4.5V

2) Low gate charge.?

3) Green device available.?

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).?

5) Excellent package for good heat dissipation.