IRLR3802場效應(yīng)管P TO P兼容物料DB004NG，20V90A 3.5mΩ TO-252封裝

型號：DB004NG

電壓電流：20V90A

內(nèi)阻：3.5mΩ

封裝：TO-252封裝

應(yīng)用：太陽能燈、數(shù)碼產(chǎn)品鋰電池保護(hù)

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.

Features：

1) VDS=20V,ID=90A,RDS(ON)<3.5mΩ@VGS=4.5V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).

5) Excellent package for good heat dissipation.