IRFR024N可被DE036NG替代，國(guó)產(chǎn)場(chǎng)效應(yīng)管MOS管
IRFR024N的替代型號(hào)DE036NG，N管 55V16A TO252封裝 36mΩ
型號(hào)：DE036NG
N管
電壓電流：55V16A?
封裝：TO252封裝
內(nèi)阻：36mΩ
Description：
This N-Channel MOSFET uses advanced trench technology and?
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features：
1) VDS=60V,ID=20A,RDS(ON)<36mΩ@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
