低壓MOS管DO3400B可替代AO3400 SOT-23 N管 30V5.8A 26mΩ
低壓MOS管DO3400B可替代AO3400 SOT-23 N管 30V5.8A 26mΩ
型號(hào)：DO3400B
N管
電壓電流：30V5.8A
內(nèi)阻：26mΩ
封裝：SOT-23
Description：
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.?
Features：
1) VDS=30V,ID=5.8A,RDS(ON)<26mΩ@VGS=10V
2) Low gate charge.?
3) Green device available.?
4) Advanced high cell denity trench technology for ultra RDS(ON).?
5) Excellent package for good heat dissipation.
