AP9T18GH替換型號DB008NG，完全兼容AP9T18GH，可用于數(shù)碼產(chǎn)品鋰電池保護等
AP9T18GH替換型號DB008NG，完全兼容AP9T18GH，可用于數(shù)碼產(chǎn)品鋰電池保護等
型號：DB008NG
N管
電壓電流：20V45A
內(nèi)阻：RDS(ON)< 8mΩ@VGS=4.5V
封裝：TO-252
應(yīng)用：數(shù)碼產(chǎn)品鋰電池保護
Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.?
Features：
1) VDS=20V,ID=45A,RDS(ON)< 8mΩ@VGS=4.5V
2) Low gate charge.?
3) Green device available.?
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).?
5) Excellent package for good heat dissipation.
